Various technologies such as gates, capacitor, and interconnect are expected to influence high-k and ALD/CVD metal precursor market growth over the coming seven years. Interconnect technology, which had a considerable impact on the global high-k and ALD/CVD metal precursor industry share in 2015, is expected to witness a significant growth over the period of 2016-2024. Gates technology based high-k and ALD/CVD metal precursor market, which was estimated at over USD 33 million in 2015, is forecast to grow considerably over the next few years, owing to high requirement for thermal and chemical stability.
Favorable government legislations encouraging production of power saving semiconductor devices will benefit high-k and ALD/CVD metal precursor market. High application potential of semiconductors in mobiles, smartphones, iPhones, cars, and DTV are expected to enhance the growth prospects of the industry over the coming years. The high-k and ALD/CVD metal precursor market size is forecast to hit USD 965 million by 2024.
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Today, industry players are laying more emphasis on developing processes to form hybrid thin inorganic-organic films with the desired features to reduce production costs, thereby stimulating the demand for high-k and ALD/CVD metal precursors. High popularity of trailing edge devices supporting internet of things (IoT) technology and consumer electronics sector growth, is expected to fuel the industry trends over the coming seven years.
Asia Pacific high-k and ALD/CVD metal precursor market growth is predicted to be driven by increasing demand for semiconductors across BRICS nations. Thailand, South Korea, and Taiwan are anticipated to offer lucrative growth avenues for the industry. In addition to this, low cost and portability of the precursors are expected to drive the regional growth over the coming seven years.
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Moreover, high potential for VLSI (Very Large Scale Integrated) circuit manufacturing along with the predicted increase in the number of CMOS (Complementary Metal Oxide Semiconductor) and DRAM (Dynamic Random Access Memory) applications is projected to propel Europe high-k and ALD/CVD metal precursor market size over the coming years. Germany is anticipated to be the major regional revenue contributor.
North America high-k and ALD/CVD metal precursor market revenue is expected to witness a high surge over the period of 2016-2024, driven by growing nanotechnology and microelectronics sector. U.S. is projected to contribute significantly towards the regional revenue.
Some Point from Table of Contents:
TABLE 1 High-k and ALD/CVD metal precursors industry 3600 synopsis, 2013 – 2024
TABLE 2 Global High-k and ALD/CVD metal precursor market, (USD Million), 2013 – 2024
TABLE 3 Global market estimates and forecast by region, (USD Million), 2013 – 2024
TABLE 4 Global market estimates and forecast by technology, (USD Million), 2013 – 2024
TABLE 5 List of key precursor families
TABLE 6 Key solutions
TABLE 7 Roadmap for precursor development
TABLE 8 Expected developments in the semiconductor industry
TABLE 9 Growth drivers
TABLE 10 Industry pitfalls & challenges
TABLE 11 Competitive landscape, 2015
TABLE 12 Strategy dashboard
TABLE 13 Global high-k interconnect demand (USD Million), 2013 – 2024
TABLE 14 Global high-k interconnect demand by region (USD Million), 2013 – 2024
TABLE 15 Global high-k capacitors demand (USD Million), 2013 – 2024
TABLE 16 Global high-k capacitors demand by region (USD Million), 2013 – 2024
TABLE 17 Global high-k metal gates demand (USD Million), 2013 – 2024
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